Infineon IRF6629TR1PBF

Name: Infineon IRF6629TR1PBF
Brand: Infineon
SKU: IRF6629TR1PBF

Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R

$ 3.01

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6629TR1PBF	0	1K	Bulk				3.010	2.750	10h
Farnell	IRF6629TR1PBF	0	1		1.282*	1.282*	1.282*	1.282*	1.282*	8h
Win Source	WS-IRF6629TR1PBF	4,000	45				1.378	0.919	0.919	22h
Worldway Electronics	IRF6629TR1PBF	9,305	7	Tape & Reel		0.589	0.571	0.541	0.541	2d
ICPartonline	IRF6629TR1PBF	5,766			2.000	1.900	1.800	1.700	1.600	>1wk

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6629TR1PBF.

IHS

Datasheet10 pages19 years ago

DigiKey

Newark

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-07-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

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Descriptions

Descriptions of Infineon IRF6629TR1PBF provided by its distributors.

Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R

Avnet

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

Newark

A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

International Rectifier

MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC