Infineon IRF6611TR1

Name: Infineon IRF6611TR1
Brand: Infineon
SKU: IRF6611TR1

Power Field-Effect Transistor, 27A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Obsolete

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Distributor	SKU		Min
Farnell	IRF6611TR1	0	1	1.673*	1.673*	1.619*	1.565*	1.565*	11h
Win Source	WS-IRF6611TR1	20	2		20.345	17.632	17.632	17.632	1h
ICPartonline	IRF6611TR1	39,522		4.000	3.800	3.600	3.400	3.200	>1wk
Anlinkda	IRF6611TR1	19,716		1.326	1.188	1.073	1.025	0.987	3d
Run Hong Electronics	IRF6611TR1	10,042		3.056	3.056	3.056	3.056	3.056	12h

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6611TR1.

IHS

Datasheet10 pages20 years ago

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-02-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRF6611TR1 provided by its distributors.

Power Field-Effect Transistor, 27A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N-CH 30V 32A DIRECTFET

DigiKey

MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:MX; No. of Pins:5; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:4860pF; Current Id Max:22A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:3.9W; Power Dissipation Pd:3.9W; Pulse Current Idm:220A; Reverse Recovery Time trr Typ:24ns; SMD Marking:6611; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V

element14 APAC