Infineon IRF6618TR1PBF

Name: Infineon IRF6618TR1PBF
Brand: Infineon
SKU: IRF6618TR1PBF

30V N-channel Hexfet Power Mosfet With 20 Volt Gate, Directfet Mt

$ 3.91

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6618TR1PBF	0	1K	Bulk				3.910	3.600	4h
Farnell	IRF6618TR1PBF	0	1		1.213*	1.213*	1.213*	1.213*	1.213*	11h
Component Stockers USA	IRF6618TR1PBF	462			99.990	99.990	99.990	99.990	99.990	2d
Win Source	WS-IRF6618TR1PBF	4,000	10			6.036	4.024	4.024	4.024	12h
Worldway Electronics	IRF6618TR1PBF	16,006	7	Tape & Reel		1.136	1.101	1.043	1.043	11h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6618TR1PBF.

IHS

Datasheet10 pages18 years ago

Datasheet9 pages18 years ago

Newark

Arrow Electronics

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

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Descriptions

Descriptions of Infineon IRF6618TR1PBF provided by its distributors.

30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MT

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MT T/R

Avnet

Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes

Newark

MOSFET, N, DIRECTFET, 30V, MT; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Base Number:6618; Current, Idm Pulse:240A; Marking, SMD:2.8; Power Dissipation:2.8mW; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V

Farnell