Infineon IRF6618TRPBF

Name: Infineon IRF6618TRPBF
Brand: Infineon
SKU: IRF6618TRPBF

Single N-Channel 30 V 3.4 mOhm 65 nC HEXFET® Power Mosfet - DirectFET®

$ 1.21

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF6618TRPBF	2,279	1		2.554	1.831	1.346	1.034	0.990
Rochester Electronics		IRF6618TRPBF	46					1.460	1.210	1.080	18h
DigiKey	2	IRF6618TRPBFCT-ND	1,969	1	Cut Tape	3.620	2.359	1.642	1.237	1.237
RS (Formerly Allied Electronics)		IRF6618TRPBF	0	4800	Bulk					2.940	7h
Farnell	2	IRF6618TRPBF	0	1	Cut Tape	2.561*	2.319*	1.928*	1.442*	1.442*	5h

Inventory History

3 month trend: -8.30%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF6618TRPBF.

IHS

Datasheet10 pages18 years ago

Datasheet9 pages18 years ago

RS (Formerly Allied Electronics)

Newark

iiiC

Arrow Electronics

Inventory History

3 month trend:

-8.30%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF6618TRPBF

InfineonIRF6618TR1PBF

Price @ 1000

$ 1.21

$ 3.91

Stock

553,290

45,408

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

30 A

Threshold Voltage

1.64 V

Rds On Max

2.2 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.8 W

89 W

Input Capacitance

5.64 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-07-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-08-25

LTD Date2013-02-25

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Descriptions

Descriptions of Infineon IRF6618TRPBF provided by its distributors.

Single N-Channel 30 V 3.4 mOhm 65 nC HEXFET® Power Mosfet - DirectFET®

Future Electronics

A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes., MG-WDSON-5, RoHS

Infineon SCT

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes

Newark

2.8W(Ta),89W(Tc) 20V 2.35V@ 250¦ÌA 65nC@ 4.5 V 1N 30V 2.2m¦¸@ 30A,10V 30A,170A 5.64nF@15V MG-WDSON-5 , 6.35mm*5.05mm*700¦Ìm

UnikeyIC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon