Infineon IRF530NSTRRPBF

Name: Infineon IRF530NSTRRPBF
Brand: Infineon
SKU: IRF530NSTRRPBF

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF530NSTRRPBF	0	1600	Bulk					2.180	21h
Win Source	WS-IRF530NSTRRPBF	72,360	125					0.312	0.312	8h
Worldway Electronics	IRF530NSTRRPBF	12,916	7	Tape & Reel		0.117	0.113	0.107	0.107	7h
SHENGYU ELECTRONICS	IRF530NSTRRPBF	14,499	1		0.306	0.300	0.290	0.280	0.270	3d
ZTZ Technology Limited	IRF530NSTRRPBF	2,654			0.811	0.746	0.681	0.551	0.551	1d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF530NSTRRPBF.

IHS

Datasheet11 pages22 years ago

Datasheet12 pages22 years ago

Upverter

Newark

RS (Formerly Allied Electronics)

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-03-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

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Descriptions

Descriptions of Infineon IRF530NSTRRPBF provided by its distributors.

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK T/R

Avnet

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:17A; Package/Case:D2-PAK; Power Dissipation, Pd:3.8W; Continuous Drain Current - 100 Deg C:12A; Drain Source On Resistance @ 10V:90mohm ;RoHS Compliant: Yes

Newark

N CHANNEL MOSFET, 100V, 17A, D2-PAK; Tra; N CHANNEL MOSFET, 100V, 17A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:100V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

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