Infineon IRF3415PBF

Name: Infineon IRF3415PBF
Brand: Infineon
SKU: IRF3415PBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 0.042 Ohm; Id 43A; TO-220AB; Pd 200W; Vgs +/-20V

$ 0.913

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
DigiKey		IRF3415PBF-ND	3,040	1	Tube	2.970	1.919	1.320	0.982	0.823
Avnet	2	IRF3415PBF	16,194	50				0.800	0.688	0.688	13h
Newark		IRF3415PBF	1,517	1		2.580	1.730	1.240	0.969	0.969
Future Electronics	2	IRF3415PBF	32,780	50	Tube			0.940	0.885	0.845
Arrow Electronics	3	IRF3415PBF	14,733	1		2.751	1.762	1.217	0.838	0.838

Inventory History

3 month trend: -2.15%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF3415PBF.

IHS

Datasheet10 pages22 years ago

Datasheet9 pages21 years ago

Newark

Burklin Elektronik

RS (Formerly Allied Electronics)

Jameco

Inventory History

3 month trend:

-2.15%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF3415PBF

InfineonAUIRF3415

Price @ 1000

$ 0.913

$ 1.18

Stock

598,915

38,893

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

150 V

Continuous Drain Current (ID)

43 A

Threshold Voltage

4 V

2 V

Rds On Max

42 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

150 W

200 W

Input Capacitance

2.4 nF

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-08-14

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2014-10-25

LTD Date2015-04-25

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Descriptions

Descriptions of Infineon IRF3415PBF provided by its distributors.

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 150 V 42 mOhm 200 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Infineon Technologies N channel HEXFET power MOSFET, 150 V, 43 A, TO-220, IRF3415PBF

Burklin Elektronik

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 150 V, 37 A, 0.042 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 150V 43A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N Channel Mosfet, 150V, 43A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:43A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF3415PBF.

Newark

MOSFET, N, 150V, 43A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:43A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:150A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC