Infineon IPP90R800C3XKSA2

Power Transistor MOSFET N-Channel Enhancement 900V 6.9A 3-Pin TO-220

N-Channel 900 V 6.9 A 104 W 800 mOhm Through Hole Mosfet - PG-TO220-3

Trans MOSFET N-CH 900V 6.9A 3-Pin(3+Tab) TO-220 Tube

104W(Tc) 20V 3.5V@ 460¦ÌA 42nC@ 10 V 1N 900V 800m¦¸@ 4.1A,10V 6.9A 1.1nF@100V TO-220

Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Mosfet, N-Ch, 900V, 6.9A, To-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:6.9A; On Resistance Rds(On):0.62Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Infineon IPP90R800C3XKSA1

900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:900V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.9A; Package / Case:TO-220; Power Dissipation Pd:104W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V