Infineon IPP65R125C7XKSA1

Name: Infineon IPP65R125C7XKSA1
Brand: Infineon
SKU: IPP65R125C7XKSA1

N-Channel 650 V 18 A 101 W 111 mOhm Through Hole Mosfet - PG-TO220-3

$ 2.004

EOL

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPP65R125C7XKSA1	74					1.750	1.560	1.470	9h
Arrow Electronics		IPP65R125C7XKSA1	490	1		2.363	2.363	1.958	1.958	1.958
DigiKey		IPP65R125C7XKSA1-ND	464	1	Tube	5.700	5.700	2.686	2.686	2.686
Future Electronics	2	IPP65R125C7XKSA1	0	50	Tube			2.110	2.050	2.000
Avnet		IPP65R125C7XKSA1	0	500					1.936	1.906	11h

Inventory History

3 month trend: -1.11%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP65R125C7XKSA1.

IHS

Datasheet15 pages0 years ago

Inventory History

3 month trend:

-1.11%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-01-20

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IPP65R125C7XKSA1 provided by its distributors.

N-Channel 650 V 18 A 101 W 111 mOhm Through Hole Mosfet - PG-TO220-3

Future Electronics

Trans MOSFET N-CH 650V 18A 3-Pin(3+Tab) TO-220 Tube

Verical

INFINEON IPP65R125C7Power MOSFET, N Channel, 18 A, 650 V, 0.11 ohm, 10 V, 3.5 V

Jak Electronics

Power Field-Effect Transistor, 18A I(D), 650V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N-CH, 650V, 18A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; P

Farnell

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon