Infineon IPP65R150CFDAAKSA1

MOSFET N-CH 650V 22.4A TO220-3 N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3

Trans MOSFET N-CH 650V 22.4A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101

Infineon N-Ch MOSFET CoolMOS CFDA, Vds=650V 22.4A TO-220 TH 3-Pin

Mosfet, Aec-Q101, N-Ch, 650V, To-220-3; |Infineon Technologies IPP65R150CFDAAKSA1

22.4 A 650 V 0.15 ohm N-CHANNEL Si POWER MOSFET TO-220AB

IPP Series 650 V 150 mOhm 86 nC Through Hole Power Transistor - TO-220-3

Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

650V CoolMOS™ CFDA Superjunction (SJ) MOSFET is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ power MOSFETs, PG-TO220-3, RoHS

MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 22.4A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs

650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting