Infineon IPP65R095C7XKSA1

Name: Infineon IPP65R095C7XKSA1
Brand: Infineon
SKU: IPP65R095C7XKSA1

128W 20V 4V 45NC@ 10V 1N 650V 95M¦¸@ 10V 24A 2.14NF@ 400V TO-220 10MM*4.4MM*15.65MM

$ 2.726

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Distributor		SKU		Min	Pkg
Avnet	2	13AC9084	19	1		6.110	3.230	2.970	2.820	2.820	2d
Newark		IPP65R095C7XKSA1	19	1		0.984	0.984	0.984	0.984	0.984
Rochester Electronics		IPP65R095C7XKSA1	67					2.400	2.150	2.020	21h
Arrow Electronics		IPP65R095C7XKSA1	500	1		3.448	3.448	3.094	2.692	2.692
DigiKey		IPP65R095C7XKSA1-ND	114	1	Tube	7.650	7.650	3.699	2.895	2.731

Inventory History

3 month trend: +15.40%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP65R095C7XKSA1.

Official Datasheet5 years ago

Inventory History

3 month trend:

+15.40%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2013-10-11

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPP65R095C7XKSA1 provided by its distributors.

128W 20V 4V 45nC@ 10V 1N 650V 95m¦¸@ 10V 24A 2.14nF@ 400V TO-220 10mm*4.4mm*15.65mm

Unikeyic (ICkey)

Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220

Verical

Power Field-Effect Transistor, 24A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 650V, 24A, 150Deg C, 128W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:24A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon Technologies IPP65R095C7XKSA1

Newark

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Infineon