Infineon IPP65R110CFDXKSA1

Name: Infineon IPP65R110CFDXKSA1
Brand: Infineon
SKU: IPP65R110CFDXKSA1

MOSFET N-CH 700V 31.2A TO220-3 N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

$ 3.06

Obsolete

Datasheet

Manufacturer Page

Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Rochester Electronics

USD

Tube

USD

USD

USD

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP65R110CFDXKSA1.

IHS

Datasheet20 pages14 years ago

TME

Inventory History

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Alternate Parts

This Part

Alternate Parts

InfineonIPP65R110CFDXKSA1

InfineonIPP65R110CFDAAKSA1

Price @ 1000

$ 3.06

$ 3.275

Stock

68,641

211,624

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-15

Lifecycle StatusObsolete (Last Updated: 6 months ago)

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Descriptions

Descriptions of Infineon IPP65R110CFDXKSA1 provided by its distributors.

MOSFET N-CH 700V 31.2A TO220-3 N-Channel 700 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO220-3

Eurochip Technologies LTD

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube

Verical

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

277.8W(Tc) 20V 4.5V@1.3mA 118nC@ 10 V 1individualNChannel 700V 110mΩ@ 12.7A,10V 31.2A 3.24nF@100V TO-220 Through hole mounting 4.57mm(height)

UnikeyIC

Mosfet, N-Ch, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPP65R110CFDXKSA1

Newark

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon