Infineon IPP65R110CFDXKSA1

Name: Infineon IPP65R110CFDXKSA1
Brand: Infineon
SKU: IPP65R110CFDXKSA1

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube

$ 3.06

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
Rochester Electronics	IPP65R110CFDXKSA1	400					3.420	3.060	2.880	20h
Win Source	WS-IPP65R110CFDXKSA1	20	8			6.613	4.409	4.409	4.409	21h
Worldway Electronics	IPP65R110CFDXKSA1	17,682	7	Tube		3.244	3.182	3.060	2.999	20h
Aztech	IPP65R110CFDXKSA1	9,828			7.350	7.350	7.350	7.350	7.350	14h
UnikeyIC	IPP65R110CFDXKSA1	480	6	Cut Tape		5.556	5.458	4.917	4.917	2h

Inventory History

3 month trend: +8.55%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP65R110CFDXKSA1.

IHS

Datasheet20 pages14 years ago

TME

Inventory History

3 month trend:

+8.55%

CAD Models

Download Infineon IPP65R110CFDXKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

InfineonIPP65R110CFDXKSA1

InfineonIPP65R110CFDAAKSA1

Price @ 1000

$ 3.06

$ 3.205

Stock

38,720

228,358

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Drain to Source Voltage (Vdss)

650 V

Continuous Drain Current (ID)

31.2 A

Threshold Voltage

Rds On Max

110 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

277.8 W

Input Capacitance

3.24 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-15

Lifecycle StatusObsolete (Last Updated: 5 months ago)

Related Parts

InfineonIPP65R099C6XKSA1

MOSFET N-CH 650V 38A TO220-3 / N-Channel 650 V 38A (Tc) 278W (Tc) Through Hole PG-TO220-3

Details

STMicroelectronicsSTP45N65M5

N-channel 650 V, 0.067 Ohm, 35 A MDmesh M5 Power MOSFET in TO-220 package

Details

InfineonIPP65R095C7XKSA1

128W 20V 4V 45nC@ 10V 1N 650V 95m¦¸@ 10V 24A 2.14nF@ 400V TO-220 10mm*4.4mm*15.65mm

Details

STMicroelectronicsSTP38N65M5

N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh m5 Power MOSFET in TO-220 package

Details

STMicroelectronicsSTP34N65M5

N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-220 package

Details

InfineonIPP60R099CPXKSA1

255W(Tc) 20V 3.5V@1.2mA 80nC@ 10 V 1N 600V 99m¦¸@ 18A,10V 31A 2.8nF@100V TO-220,TO-220-3 9.45mm

Details

Descriptions

Descriptions of Infineon IPP65R110CFDXKSA1 provided by its distributors.

Trans MOSFET N-CH 650V 31.2A 3-Pin(3+Tab) TO-220 Tube

Verical

277.8W(Tc) 20V 4.5V@1.3mA 118nC@ 10 V 1N 700V 110m¦¸@ 12.7A,10V 31.2A 3.24nF@100V TO-220 4.57mm

Unikeyic (ICkey)

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7, PG-TO220-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Mosfet, N-Ch, 650V, 31.2A, 277.8W; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:31.2A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IPP65R110CFDXKSA1

Newark

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.

Infineon