Infineon IPP040N06N3GXKSA1

Name: Infineon IPP040N06N3GXKSA1
Brand: Infineon
SKU: IPP040N06N3GXKSA1

188W(Tc) 20V 4V@ 90¦ÌA 98nC@ 10 V 1N 60V 4m¦¸@ 90A, 10V 11nF@30V TO-220-3 10mm*4.4mm*15.65mm

$ 0.749

EOL

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Distributor		SKU		Min	Pkg
Avnet		IPP040N06N3GXKSA1	440	1		0.459	0.442	0.436	0.436	0.436	2d
Newark		IPP040N06N3GXKSA1	373	1		2.270	2.040	1.640	1.110	1.000
Arrow Electronics	2	IPP040N06N3GXKSA1	2,120	1		1.152	0.796	0.735	0.635	0.635
Rochester Electronics		IPP040N06N3GXKSA1	742,821					0.800	0.664	0.592	9h
DigiKey		448-IPP040N06N3GXKSA1-ND	529	1	Tube	2.170	2.170	0.944	0.752	0.752

Inventory History

3 month trend: +2.93%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP040N06N3GXKSA1.

Farnell

Datasheet11 pages15 years ago

Newark

element14 APAC

iiiC

Inventory History

3 month trend:

+2.93%

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Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-29

Lifecycle StatusEOL (Last Updated: 3 weeks ago)

LTB Date2026-09-30

LTD Date2027-03-31

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Descriptions

Descriptions of Infineon IPP040N06N3GXKSA1 provided by its distributors.

188W(Tc) 20V 4V@ 90¦ÌA 98nC@ 10 V 1N 60V 4m¦¸@ 90A,10V 11nF@30V TO-220-3 10mm*4.4mm*15.65mm

Unikeyic (ICkey)

INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3

Jak Electronics

Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.

Infineon

MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

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