Infineon IPI60R125CPXKSA1

Name: Infineon IPI60R125CPXKSA1
Brand: Infineon
SKU: IPI60R125CPXKSA1

N-Channel 650 V 25 A 208 W 125 mOhm Surface Mount Mosfet - PG-TO262-3-1

$ 2.71

NRND

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IPI60R125CPXKSA1	2,799					2.310	2.070	1.940	19h
DigiKey		IPI60R125CPXKSA1-ND	478	1	Tube	7.420	7.420	3.579	2.796	2.636
Future Electronics	2	IPI60R125CPXKSA1	0	50	Tube			2.780	2.710	2.640
Avnet		IPI60R125CPXKSA1	0	500					2.493	2.306	22h
Arrow Electronics		IPI60R125CPXKSA1	0	500					2.820	2.655

Inventory History

3 month trend: -0.12%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPI60R125CPXKSA1.

IHS

Datasheet10 pages15 years ago

element14 APAC

Farnell

Inventory History

3 month trend:

-0.12%

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-12-04

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPI60R125CPXKSA1 provided by its distributors.

N-Channel 650 V 25 A 208 W 125 mOhm Surface Mount Mosfet - PG-TO262-3-1

Future Electronics

Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IHS

CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

Infineon

MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:25A; On State Resistance:0.125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:208W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:25A; Package / Case:TO-262; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC