Infineon IPD90N06S4L03ATMA2

Name: Infineon IPD90N06S4L03ATMA2
Brand: Infineon
SKU: IPD90N06S4L03ATMA2

MOSFET N-CH 60V 90A TO252-31 / N-Channel 60 V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11

$ 0.945

NRND

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Distributor		SKU		Min	Pkg
Avnet	2	49AC0298	77	1		2.910	1.900	1.310	1.180	1.180	14h
Newark	2	IPD90N06S4L03ATMA2	77	1	Cut Tape	0.671	0.671	0.671	0.671	0.671
Rutronik		TMOS1103	2,500	2500						1.138	19h
Rochester Electronics		IPD90N06S4L03ATMA2	29,551					1.080	0.896	0.799	11h
Arrow Electronics	2	IPD90N06S4L03ATMA2	2,500	1		2.100	1.423	1.140	0.912	0.807

Inventory History

3 month trend: +2.55%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD90N06S4L03ATMA2.

IHS

Datasheet9 pages17 years ago

Inventory History

3 month trend:

+2.55%

CAD Models

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Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-03-24

Lifecycle StatusNRND (Last Updated: 1 month ago)

LTB Date2016-12-01

LTD Date2017-06-01

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Descriptions

Descriptions of Infineon IPD90N06S4L03ATMA2 provided by its distributors.

MOSFET N-CH 60V 90A TO252-31 / N-Channel 60 V 90A (Tc) 150W (Tc) Surface Mount PG-TO252-3-11

Win Source

Power MOSFET, N Channel, 60 V, 90 A, 0.0027 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

60V, N-Ch, 3.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2, PG-TO252-3, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) TO-252 T/R

Verical

Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, AEC-Q101, N-CH, 60V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V

element14 APAC

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested; Ultra low RDSon | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon