Infineon IPD60R385CPATMA1

Name: Infineon IPD60R385CPATMA1
Brand: Infineon
SKU: IPD60R385CPATMA1

Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor

$ 1.01

NRND

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Future Electronics	2	IPD60R385CPATMA1	5,000	2500	Tape & Reel					0.940
Rochester Electronics		IPD60R385CPATMA1	1,427					1.110	0.921	0.821	6h
DigiKey	3	IPD60R385CPATMA1CT-ND	46,946	1	Cut Tape	3.460	2.236	1.538	1.144	1.144
Arrow Electronics		IPD60R385CPATMA1	15,000	2500						0.888
Avnet		IPD60R385CPATMA1	0	2500						0.864	1d

Inventory History

3 month trend: +228%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD60R385CPATMA1.

element14 APAC

Datasheet11 pages11 years ago

IHS

Newark

Farnell

Inventory History

3 month trend:

+228%

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-08-31

Lifecycle StatusNRND (Last Updated: 3 days ago)

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Descriptions

Descriptions of Infineon IPD60R385CPATMA1 provided by its distributors.

Trans MOSFET N-CH 600V 9A 3-Pin(2+Tab) DPAK T/R / CoolMOS Power Transistor

Win Source

Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Abacus Technologies

CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

Infineon

MOSFET, N, TO-252; Transistor Type:Power MOSFET; Transistor Polarity:N; Typ Voltage Vds:650V; Current, Id Cont:9A; On State Resistance:0.385ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-252; ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:650V; On Resistance Rds(on):385mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:83W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9A; Package / Case:TO-252; Power Dissipation Pd:83W; Pulse Current Idm:27A; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC