Infineon IPD50R280CEAUMA1

Name: Infineon IPD50R280CEAUMA1
Brand: Infineon
SKU: IPD50R280CEAUMA1

Mosfet Transistor, N Channel, 13 A, 550 V, 0.25 Ohm, 13 V, 3 V

$ 0.617

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Distributor		SKU		Min	Pkg
Newark		IPD50R280CEAUMA1	2,119	1	Cut Tape	2.160	1.460	1.050	0.820	0.820
Future Electronics	2	IPD50R280CEAUMA1	2,500	2500	Tape & Reel					0.385
Arrow Electronics	2	IPD50R280CEAUMA1	6,825	1		1.509	1.121	0.839	0.615	0.607
Rochester Electronics		IPD50R280CEAUMA1	1,300					0.646	0.536	0.478	5h
DigiKey	3	IPD50R280CEAUMA1CT-ND	2,612	1	Cut Tape	1.990	1.268	0.853	0.618	0.618

Inventory History

3 month trend: -4.48%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD50R280CEAUMA1.

Official Datasheet4 years ago

Inventory History

3 month trend:

-4.48%

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-06-28

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IPD50R280CEAUMA1 provided by its distributors.

Mosfet Transistor, N Channel, 13 A, 550 V, 0.25 Ohm, 13 V, 3 V

Newark

Transistor MOSFET N-CH 500V 13A 3-Pin TO-252 T/R

Avnet

Trans MOSFET N-CH 550V 18.1A Automotive 3-Pin(2+Tab) DPAK T/R

Verical

Power Field-Effect Transistor, 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N CH, 550V, 13A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; Pow

Farnell

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Infineon