onsemi FQD3P50TM

Name: onsemi FQD3P50TM
Brand: onsemi
SKU: FQD3P50TM

P-channel Power Mosfet, Qfet®, -500 V, -2.1 A, 4.9 Ω, Dpak

$ 0.574

Production

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	FQD3P50TM	200,000	2500						0.549	6d
Newark	2	FQD3P50TM	2,416	1	Cut Tape	0.468	0.468	0.468	0.468	0.468
Verical	4	FQD3P50TM	2,500	2500						0.541
Arrow Electronics	2	FQD3P50TM	1,690	1		1.011	0.841	0.694	0.574	0.574
Master Electronics		FQD3P50TM	4,250	50				0.979	0.461	0.453

Inventory History

3 month trend: -17.64%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQD3P50TM.

JRH Electronics

Datasheet8 pages6 years ago

IHS

Upverter

onsemi

Fairchild Semiconductor

Inventory History

3 month trend:

-17.64%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-10-18

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FQD3P50TM provided by its distributors.

P-Channel Power MOSFET, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

onsemi

TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2.1A I(D),TO-252AA

Newark

In a Pack of 10, FQD3P50TM P-Channel MOSFET, 1.33 A, 500 V QFET, 3-Pin DPAK ON Semiconductor

Fly-Wing Technology

Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 500V 2.1A DPAK

Win Source

Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount

Avnet

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.1 / Drain-Source Voltage (Vds) V = -500 / ON Resistance (Rds(on)) Ohm = 4.9 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 50

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