Infineon IPD122N10N3GATMA1

Name: Infineon IPD122N10N3GATMA1
Brand: Infineon
SKU: IPD122N10N3GATMA1

Power MOSFET, N Channel, 100 V, 59 A, 0.0105 ohm, TO-252 (DPAK), Surface Mount

$ 0.736

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	IPD122N10N3GATMA1	250	1	Cut Tape	2.080	1.100	0.824	0.824	0.824
Future Electronics	2	IPD122N10N3GATMA1	12,500	2500	Tape & Reel					0.590
Rochester Electronics	2	IPD122N10N3GATMA1	1,638					0.767	0.636	0.567	2h
Arrow Electronics	3	IPD122N10N3GATMA1	1,976	1		1.706	1.007	0.778	0.617	0.617
DigiKey	3	IPD122N10N3GATMA1CT-ND	2,040	1	Cut Tape	2.630	1.685	1.141	0.834	0.834

Inventory History

3 month trend: +12.71%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD122N10N3GATMA1.

IHS

Datasheet9 pages12 years ago

_legacy Avnet

Farnell

Inventory History

3 month trend:

+12.71%

CAD Models

Download Infineon IPD122N10N3GATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginGermany, Malaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-07-09

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2016-04-30

LTD Date2016-10-31

Related Parts

InfineonIPD60N10S4L12ATMA1

IPD60N10S4L Series 100 V 60 A OptiMOSTM-T2 Power-Transistor - PG-TO-252-3-313

Details

InfineonIPD60N10S412ATMA1

Mosfet, N-Ch, 100V, 60A, To-252 Rohs Compliant: Yes |Infineon Technologies IPD60N10S412ATMA1

Details

STMicroelectronicsSTD85N10F7AG

Trans MOSFET N-CH 100V 70A Automotive 3-Pin(2+Tab) DPAK T/R

Details

InfineonIPD70N10S312ATMA1

100V, N-Ch, 11.1 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS

Details

Diodes Inc.DMNH10H028SK3-13

MOSFET N-CH 100V 55A TO252 / N-Channel 100 V 55A (Tc) 2W (Ta) Surface Mount TO-252-3

Details

Diodes Inc.DMNH10H028SK3Q-13

Single N-Channel 100 V 28 mOhm 22 nC 3.7 W Silicon SMT Mosfet - TO-252-3

Details

Descriptions

Descriptions of Infineon IPD122N10N3GATMA1 provided by its distributors.

Power MOSFET, N Channel, 100 V, 59 A, 0.0105 ohm, TO-252 (DPAK), Surface Mount

EBV Elektronik

Power Field-Effect Transistor, 59A I(D), 100V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon