Infineon IPB60R099CPAATMA1

Name: Infineon IPB60R099CPAATMA1
Brand: Infineon
SKU: IPB60R099CPAATMA1

N-Channel 600 V 0.105 Ohm CoolMOS® Power Transistor-PG-TO263-3-2

$ 3.87

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark		IPB60R099CPAATMA1	274	1	Cut Tape	7.980	5.550	4.270	3.990	3.990
Rochester Electronics		IPB60R099CPAATMA1	751					3.380	3.030	2.850	17h
DigiKey	3	448-IPB60R099CPAATMA1CT-ND	129	1	Cut Tape	9.900	6.730	4.935	4.170	4.170
Arrow Electronics	2	IPB60R099CPAATMA1	737	1		7.697	5.581	4.113	3.931	3.931
Avnet		IPB60R099CPAATMA1	0	1K					3.868	3.471	20h

Inventory History

3 month trend: -10.53%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB60R099CPAATMA1.

IHS

Datasheet11 pages17 years ago

Newark

Farnell

Inventory History

3 month trend:

-10.53%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPB60R099CPAATMA1

InfineonIPB60R099CPATMA1

Price @ 1000

$ 3.87

$ 3.512

Stock

296,929

730,277

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263-3

TO-263

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

31 A

Threshold Voltage

Rds On Max

105 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

255 W

Input Capacitance

2.8 nF

Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-08-10

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB60R099CPAATMA1 provided by its distributors.

N-Channel 600 V 0.105 Ohm CoolMOS® Power Transistor-PG-TO263-3-2

Future Electronics

Trans MOSFET N-CH 600V 31A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

COOLMOS POWER TRANSISTOR Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:600V; On Resistance Rds(on):99mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:255W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:31A; Package / Case:TO-263; Power Dissipation Pd:255W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

Summary of Features: Worldwide best R ds,on in TO220; Ultra low gate charge; Extreme dv/dt rated; High peak current capability; Automotive AEC Q101 qualified; Green package (RoHS compliant); CoolMOS CPA is specially designed for:; DC/DC converters for Automotive Application

Infineon