Vishay SIHB28N60EF-GE3
$ 3.23
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHB28N60EF-GE3-ND | 1,031 | 1 | Tube | ||||||||
| TTI | SIHB28N60EF-GE3 | 1,000 | 50 | Tube | 21h | |||||||
| TME | SIHB28N60EF-GE3 | 0 | 1 | 8h | ||||||||
| Future Electronics | SIHB28N60EF-GE3 | 0 | 50 | Tube | ||||||||
| Avnet | SIHB28N60EF-GE3 | 0 | 1K | 21h |
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIHB28N60EF-GE3.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-19
Lifecycle StatusProduction (Last Updated: 5 months ago)
Related Parts
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
VishaySIHB33N60EF-GE3
600V 33A 98m´Î@10V16.5A 278W 4V@250Ã×A N Channel D2PAK(TO-263) MOSFETs ROHS
STMicroelectronicsSTB40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in D2PAK package
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB42N60M2-EP
N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
Descriptions
Descriptions of Vishay SIHB28N60EF-GE3 provided by its distributors.
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
Vishay NMOS EF Series, Vds=600 V, 28 A, D2PAK (TO-263), , 3
600V, 28A, 0.123 OHM, D2PAK EF SERIES
MOSFET 600V 28A w/Fast Diode D2PAK
RS APAC
MOSFET 600V 123mOhms@10V 28A N-Ch MOSFET
Power Field-Effect Transistor, 28A I(D), 600V, 0.123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)28 A
Drain to Source Resistance123 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.714 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max123 mΩ
Rise Time40 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time24 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for Vishay SIHB28N60EF-GE3.