Infineon IPB108N15N3GATMA1

Name: Infineon IPB108N15N3GATMA1
Brand: Infineon
SKU: IPB108N15N3GATMA1

Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount

$ 1.44

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	85X6017	105	1		3.770	2.460	1.880	1.740	1.740	5d
Newark		IPB108N15N3GATMA1	1,139	1	Cut Tape	3.770	2.460	1.880	1.440	1.440
Arrow Electronics		IPB108N15N3GATMA1	23	1		2.231	1.286	1.286	1.286	1.286
Rutronik		TMOSP10397	33,000	1K					1.710	1.310	9h
DigiKey	2	IPB108N15N3GATMA1CT-ND	1,503	1	Cut Tape	4.380	2.882	2.029	1.713	1.713

Inventory History

3 month trend: -0.21%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB108N15N3GATMA1.

IHS

Datasheet11 pages9 years ago

Upverter

Inventory History

3 month trend:

-0.21%

CAD Models

Download Infineon IPB108N15N3GATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMalaysia, Mexico, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-12-01

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

Related Parts

InfineonIPB037N06N3GATMA1

Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK T/R

Details

InfineonIPB042N10N3GATMA1

214KW 20V 88nC@ 10V 1N 100V 7.4m¦¸@ 6V,4.2m¦¸@ 10V 6.32nF@ 50V TO-263 , 10mm*925cm*4.5mm

Details

InfineonIPB035N08N3GATMA1

214W 20V 3.5V 88nC@ 10V 1N 80V 3.5m¦¸@ 10V 100A 6.1nF@ 40V TO-263 , 10mm*9.25mm*4.4mm

Details

VishaySUM90N10-8M2P-E3

Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 90A D2PAK

Details

onsemiFDB8442

Trans MOSFET N-CH 40V 80A 3-Pin(2+Tab) D2PAK T/R

Details

VishaySUM40N15-38-E3

SUM40N15-38-E3 N-channel MOSFET Transistor; 40 A; 150 V; 2+Tab-Pin TO-263

Details

Descriptions

Descriptions of Infineon IPB108N15N3GATMA1 provided by its distributors.

Power MOSFET, N Channel, 150 V, 83 A, 0.0091 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Trans MOSFET N-CH 150V 83A Automotive 3-Pin(2+Tab) D2PAK

Verical

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Win Source

Power Field-Effect Transistor, 83A I(D), 150V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon

MOSFET, N CH, 150V, 83A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 83A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.0091ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell