Infineon IPB052N04N G

Name: Infineon IPB052N04N G
Brand: Infineon
SKU: IPB052N04N G

Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

$ 0.422

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPB052N04NG	1,989					0.508	0.422	0.376	10h
Farnell		IPB052N04N G	0	1		1.568*	1.568*	1.363*	0.504*	0.504*	10h
Verical		IPB052N04N G	1,989	656					0.527	0.470
Win Source		WS-IPB052N04N G	14,000	55				1.094	0.730	0.730	11h
Worldway Electronics	2	IPB052N04NG	16,079	7	Bulk		0.137	0.132	0.125	0.125	1d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB052N04N G.

IHS

Datasheet9 pages15 years ago

_legacy Avnet

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-12-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-02-28

LTD Date2013-08-31

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Descriptions

Descriptions of Infineon IPB052N04N G provided by its distributors.

Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

Avnet

Compliant Surface Mount 4 ns 3.2 ns No SVHC 16 mΩ TO-263 8

Augswan

Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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