onsemi FDB8447L

Name: onsemi FDB8447L
Brand: onsemi
SKU: FDB8447L

Trans MOSFET N-CH 40V 15A 3-Pin(2+Tab) D2PAK T/R

$ 1.215

EOL

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Verical		FDB8447L	4,000	231					1.350	1.203
Arrow Electronics		FDB8447L	6	1		0.144	0.144	0.144	0.144	0.144
Rochester Electronics		FDB8447L	4,000					1.300	1.080	0.962	18h
DigiKey	2	FDB8447LCT-ND	34	1	Cut Tape	3.000	1.951	1.951	1.951	1.951
Farnell	2	FDB8447L	0	1	Cut Tape	1.692*	1.437*	1.108*	0.987*	0.987*	18h

Inventory History

3 month trend: -0.12%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDB8447L.

Upverter

Technical Drawing1 page5 years ago

element14 APAC

IHS

Future Electronics

Farnell

Inventory History

3 month trend:

-0.12%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-09

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

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Descriptions

Descriptions of onsemi FDB8447L provided by its distributors.

Trans MOSFET N-CH 40V 15A 3-Pin(2+Tab) D2PAK T/R

Avnet

N-Channel PowerTrench® MOSFET, 40V, 50A, 8.5mΩ

onsemi

N-Channel 40 V 50 A 8.5 mOhm Surface Mount PowerTrench® Mosfet -TO-263AB

Future Electronics

40V, 50A, 8.5 MILLI OHM 40V N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

MOSFET, N, SMD, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Package / Case:D2-PAK; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V

element14 APAC

This N–Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.

Fairchild Semiconductor