Infineon IPB020N10N5ATMA1

Name: Infineon IPB020N10N5ATMA1
Brand: Infineon
SKU: IPB020N10N5ATMA1

Power MOSFET, N Channel, 100 V, 176 A, 2 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

$ 2.63

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Distributor		SKU		Min	Pkg
Newark	2	IPB020N10N5ATMA1	1,455	1	Cut Tape	6.100	4.090	3.710	3.710	3.710
Arrow Electronics		IPB020N10N5ATMA1	2,141	1		3.371	3.371	3.371	3.371	3.371
Future Electronics	2	IPB020N10N5ATMA1	8,000	1K	Tape & Reel				2.670	2.630
Rochester Electronics		IPB020N10N5ATMA1	993					2.310	2.070	1.940	23h
DigiKey	3	IPB020N10N5ATMA1CT-ND	22,340	1	Cut Tape	6.340	4.241	3.054	2.811	2.811

Inventory History

3 month trend: -25.99%

CAD Models

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Alternate Parts

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Datasheets & Documents

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IHS

Datasheet12 pages0 years ago

Datasheet11 pages0 years ago

Newark

Inventory History

3 month trend:

-25.99%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-05-05

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IPB020N10N5ATMA1 provided by its distributors.

Power MOSFET, N Channel, 100 V, 176 A, 2 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount

Avnet

IPB020N10N5 Series 100 V 2 mOhm 176 A OptiMOSTM5 Power Transistor - PG-TO 263-3

Future Electronics

OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS

Infineon SCT

Mosfet, N-Ch, 100V, 120A, 175Deg C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB020N10N5ATMA1

Newark

OptiMOS™ 5 100 V power MOSFET IPB020N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices, one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Infineon