onsemi FDB86360-F085
$ 3.04
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-12-21
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
Related Parts
InfineonIPB017N08N5ATMA1
MOSFET N-CH 80V 120A D2PAK N-Channel 80 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3
InfineonIPB020N08N5ATMA1
MOSFET N-CH 80V 120A D2PAK N-Channel 80 V 120A (Tc) 300W (Tc) Surface Mount PG-TO263-3
InfineonIPB020N10N5ATMA1
MOSFET N-CH 100V 120A D2PAK N-Channel 100 V 120A (Tc) 375W (Tc) Surface Mount PG-TO263-3
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
STMicroelectronicsSTH140N8F7-2
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Descriptions
Descriptions of onsemi FDB86360-F085 provided by its distributors.
FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB)
Trans MOSFET N-CH 80V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 110A I(D), 80V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
333W(Tc) 20V 4.5V@ 250µA 253nC@ 10 V 1individualNChannel 80V 1.8mΩ@ 80A,10V 110A 14.6nF@25V TO-263 SMD mount 10.67mm*9.65mm*4.83mm
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Technical Specifications
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.8 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance14.6 nF
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max1.8 mΩ
Rise Time197 ns
Turn-Off Delay Time86 ns
Turn-On Delay Time75 ns
Compliance
Environmental Classification
China RoHSCompliant
RatingsAEC-Q101
REACH SVHCAffected
RoHSCompliant
Compliance Statements