Infineon IHW30N120R2

Name: Infineon IHW30N120R2
Brand: Infineon
SKU: IHW30N120R2

Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

$ 1.77

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
Rochester Electronics	IHW30N120R2	10					1.980	1.770	1.660	16h
Farnell	IHW30N120R2	0	1		6.580*	6.580*	4.104*	3.297*	3.297*	16h
Component Stockers USA	IHW30N120R2	11			2.270	2.270	2.270	2.270	2.270	>1wk
Win Source	WS-IHW30N120R2	20	16				2.957	2.563	2.563	17h
Worldway Electronics	IHW30N120R2	7,051	7	Tube		1.701	1.669	1.605	1.573	17h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IHW30N120R2.

IHS

Datasheet12 pages16 years ago

_legacy Avnet

Farnell

iiiC

Inventory History

3 month trend:

+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-05-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2015-03-15

LTD Date2015-09-15

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Descriptions

Descriptions of Infineon IHW30N120R2 provided by its distributors.

Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

IHS

Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube

Avnet

IGBT 1200V 60A 390W TO247-3

DigiKey

REVERSE CONDUCTING IGBT

DigiKey Marketplace

new, original packaged

ACDS

IGBT+ DIODE,1200V,30A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:390W

element14 APAC