Infineon IHW15N120R3FKSA1

Name: Infineon IHW15N120R3FKSA1
Brand: Infineon
SKU: IHW15N120R3FKSA1

1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

$ 1.47

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Newark	IHW15N120R3FKSA1	323	1		3.470	1.900	1.550	1.530	1.360
Rochester Electronics	IHW15N120R3FKSA1	1,227					1.460	1.210	1.080	19h
DigiKey	448-IHW15N120R3FKSA1-ND	30	1	Tube	3.570	3.570	1.941	1.941	1.941
Avnet	IHW15N120R3FKSA1	0	480							21h
Farnell	IHW15N120R3FKSA1	273	1		4.173*	2.287*	1.859*	1.712*	1.712*	19h

Inventory History

3 month trend: -5.60%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IHW15N120R3FKSA1.

Newark

Datasheet15 pages0 years ago

Farnell

element14 APAC

TME

Inventory History

3 month trend:

-5.60%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-05-27

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-06-30

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Descriptions

Descriptions of Infineon IHW15N120R3FKSA1 provided by its distributors.

1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Infineon SCT

Trans IGBT Chip N-CH 1200V 30A 254W 3-Pin(3+Tab) TO-247 Tube

Verical

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247

IHS

IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Bod

Future Electronics

IGBT, 30 A, 1.7 V, 254 W, 1.2 kV, TO-247, 3 Pins

Avnet

TO-247-3 IGBT Transistors / Modules ROHS

EBEE

254W 1.48V 1.2KV 30A TO-247 21.1mm

UnikeyIC

IHW15N120R3 Infineon Technologies

YIC International

IGBT+ DIODE,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:254W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:254W

element14 APAC

The 3rd generation of reverse conducting 1200 V, 15 A TRENCHSTOP™ RC-IGBT3 with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs.

Infineon