Infineon IGW15N120H3FKSA1

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
$ 1.6
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IGW15N120H3FKSA1.

Inventory History

3 month trend:
+78.68%

CAD Models

Download Infineon IGW15N120H3FKSA1 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
EE Concierge
SymbolFootprint
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginAustria, Germany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-15
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

Related Parts

1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Igbt Single Transistor, 30 A, 2.1 V, 278 W, 1.2 Kv, To-247, 3
IGBT 1350V 15A FS2-RC Induction Heating
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Trans IGBT Chip N-CH 600V 36A 3-Pin TO-247 Tube
1350 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

Descriptions

Descriptions of Infineon IGW15N120H3FKSA1 provided by its distributors.

Infineon IGW15N120H3FKSA1 IGBT, 15 A 1200 V, 3-Pin TO-247, Through Hole
1200 V, 15 A single HighSpeed 3 H3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:217W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:217W
Configuration = Single / Continuous Collector Current (Ic) A = 15 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.05 / Emitter Leakage Current nA = 600 / Power Dissipation (Pd) W = 217 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • IGW15N120H3
  • IGW15N120H3.
  • SP000674430