Infineon IGW40N65H5FKSA1

Name: Infineon IGW40N65H5FKSA1
Brand: Infineon
SKU: IGW40N65H5FKSA1

Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube

$ 1.87

Production

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Distributor	SKU		Min	Pkg
Arrow Electronics	IGW40N65H5FKSA1	230	1		1.749	1.749	1.749	1.749	1.749
Rochester Electronics	IGW40N65H5FKSA1	36,535					1.740	1.560	1.460	4h
DigiKey	IGW40N65H5FKSA1-ND	187	1	Tube	5.110	5.110	2.848	1.985	1.742
Avnet	IGW40N65H5FKSA1	0	240					1.754	1.672	2d
Future Electronics	IGW40N65H5FKSA1	0	240	Tube				2.410	2.370

Inventory History

3 month trend: -0.54%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IGW40N65H5FKSA1.

IHS

Datasheet15 pages0 years ago

Newark

Farnell

TME

Inventory History

3 month trend:

-0.54%

CAD Models

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Supply Chain

Country of OriginAustria, Germany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-11-09

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon IGW40N65H5FKSA1 provided by its distributors.

Trans IGBT Chip N-CH 650V 74A 250W 3-Pin(3+Tab) TO-247 Tube

Verical

Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247

IHS

IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT

Digi-ic_SMART PIONEER

IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-247, 3 Pins

Avnet

TO-247-3 IGBT Transistors / Modules ROHS

EBEE

Infineon IGBT Transistor IGW40N65H5FKSA1

RS APAC

IGBT, 650V, 40A, TO247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;

Farnell

IGBT Transistors IGBT PRODUCTS

Fly-Wing Technology

IGW40N65 - DISCRETE IGBT WITHOUT

Vigor Components

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Infineon