Infineon FM25V10-GTR

Name: Infineon FM25V10-GTR
Brand: Infineon
SKU: FM25V10-GTR

Ferroelectric RAM (FRAM), 1MB, 128K x 8bit, SPI, 40MHz, 2V to 3.6V Supply, SOIC-8

$ 12.349

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Avnet		FM25V10-GTR	2,500	2500						8.760	2d
Newark		FM25V10-GTR	3	1	Cut Tape	15.780	14.650	13.500	12.680	12.680
Arrow Electronics		FM25V10-GTR	94	1		12.392	12.341	12.341	12.341	12.341
DigiKey	3	448-FM25V10-GTRCT-ND	5,015	1	Cut Tape	15.320	14.213	13.109	12.358	12.358
Future Electronics	2	FM25V10-GTR	0	2500	Tape & Reel					9.200

Inventory History

3 month trend: -22.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon FM25V10-GTR.

IHS

Datasheet27 pages6 years ago

Farnell

Future Electronics

element14 APAC

SOS electronic

Inventory History

3 month trend:

-22.02%

CAD Models

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Supply Chain

Country of OriginTaiwan, Thailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8542.32.00.71

Introduction Date2008-10-13

Lifecycle StatusProduction (Last Updated: 3 months ago)

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Descriptions

Descriptions of Infineon FM25V10-GTR provided by its distributors.

Ferroelectric RAM (FRAM), 1MB, 128K x 8bit, SPI, 40MHz, 2V to 3.6V Supply, SOIC-8

EBV Elektronik

FM25V10 Series 1 Mb (128 K x 8) 3 V Surface Mount Serial F-RAM Memory - SOIC-8

Future Electronics

F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; RoHS Phthalates Compliant:Yes; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)

element14 APAC

The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM.

Infineon