Descriptions of Infineon BSZ097N10NS5ATMA1 provided by its distributors.
Power MOSFET, N Channel, 100 V, 40 A, 0.0083 ohm, TSDSON, Surface Mount
Transistor MOSFET N-CH 100V 40A 8-Pin TSDSON T/R
Avnet Japan
2.1W 20V 3.8V 22nC@ 10V 1N 100V 9.7m¦¸@ 10V 39A 1.6nF@ 50V TDSON-8,TSDSON-8 , 3.3mm*3.3mm*1.1mm
Trans MOSFET N-CH 100V 11A Automotive 8-Pin TSDSON EP T/R
OptiMOSTM5Power-Transistor,100V, PG-TSDSON-8, RoHS
Infineon SCT
MOSFET N-Ch 100V 40A OptiMOS5 TSDSON8 FL
Power Field-Effect Transistor, 40A I(D), 100V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Ideal for high frequency switching
Mosfet, N-Ch, 100V, 40A, Tsdson; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0083Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon Technologies BSZ097N10NS5ATMA1
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.