Infineon BSM75GB120DLC
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-06-15
LTD Date2023-06-15
Related Parts
Descriptions
Descriptions of Infineon BSM75GB120DLC provided by its distributors.
Insulated Gate Bipolar Transistor, 170A I(C), 1200V V(BR)CES, N-Channel
IC REG LINEAR 2.5V 500MA 8MSOP
BSM 75GB120DLC
IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: 34 mm Collector-emitter saturation voltage: 2.6 V Energy dissipation during make-time: 7.5 mJ Energy dissipation during turn-off time: 9 mJ
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageModule
MountScrew
Number of Pins34
Number of Terminals7
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.6 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationDual
Max Collector Current170 A
Max Operating Temperature125 °C
Max Power Dissipation690 W
Min Operating Temperature-40 °C
Number of Elements2
Power Dissipation690 W
Compliance
Environmental Classification
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements