Infineon BSM50GD120DN2BOSA1

Name: Infineon BSM50GD120DN2BOSA1
Brand: Infineon
SKU: BSM50GD120DN2BOSA1

Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A

NRND

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Distributor		SKU		Min	Pkg
Avnet		BSM50GD120DN2BOSA1	0	10							6d
Microchip USA		BSM50GD120DN2BOSA1	102	50	Bulk			90.780	90.780	90.780	9h
ATI ACCURATE TECHNOLOGY		BSM50GD120DN2-INFINEON	11			220.00	187.00	187.00	187.00	187.00	7h
Worldway Electronics	2	BSM50GD120DN2	19,607	7			141.22	136.89	129.69	129.69	16h
IC Components Ltd.		BSM50GD120DN2	89,088			125.12	125.12	125.12	125.12	125.12	1d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSM50GD120DN2BOSA1.

IHS

Datasheet10 pages26 years ago

Farnell

Newark

TME

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-01-01

Lifecycle StatusNRND (Last Updated: 4 months ago)

LTB Date2009-09-30

LTD Date2010-03-31

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Descriptions

Descriptions of Infineon BSM50GD120DN2BOSA1 provided by its distributors.

Trans IGBT Module N-CH 1200V 72A 350000mW 17-Pin EconoPACK 2A

Verical

Transistor IGBT Module N-CH 1200V 72A 20V Screw Mount Tray

Avnet

INFINEON BSM50GD120DN2 IGBT Array & Module Transistor, N Channel, 72 A, 3 V, 350 W, 1.2 kV, EconoPACK

Jak Electronics

Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel

IHS

IGBT MODULE, 1200V, ECONOPACK3; Module Configuration:Six; DC Collector Current:72A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Econopack 3; No. of Pins:17; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:50A; Current Temperature:80°C; Full Power Rating Temperature:25°C; No. of Transistors:6; Package / Case:Econopack 3; Power Dissipation Max:350W; Power Dissipation Pd:350W; Power Dissipation Pd:350W; Pulsed Current Icm:100A; Termination Type:Solder; Voltage Vce Sat Typ:2.5V; Voltage Vces:1.2kV

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