Infineon BSC750N10NDGATMA1

Name: Infineon BSC750N10NDGATMA1
Brand: Infineon
SKU: BSC750N10NDGATMA1

Transistor MOSFET Array Dual N-CH 100V 13A 8-Pin TDSON T/R

Obsolete

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Distributor		SKU		Min
Farnell		BSC750N10NDGATMA1	0	5		1.069*	0.865*	0.724*	0.683*	9h
Win Source		WS-BSC750N10ND G	20	3		13.792	11.206	11.206	11.206	9h
Worldway Electronics	3	BSC750N10ND G	18,001	7		0.605	0.594	0.571	0.559	13h
IC Components Ltd.		BSC750N10NDG	17,900		9.050	9.050	9.050	9.050	9.050	3d
Aztech		BSC750N10NDGATMA1	7,679		1.430	1.430	1.430	1.430	1.430	2d

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC750N10NDGATMA1.

IHS

Datasheet10 pages15 years ago

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Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-12-14

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2019-11-15

LTD Date2020-05-15

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Descriptions

Descriptions of Infineon BSC750N10NDGATMA1 provided by its distributors.

Transistor MOSFET Array Dual N-CH 100V 13A 8-Pin TDSON T/R

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Trans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP

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Compliant Surface Mount 1 mm Contains Lead Tape & Reel 4 ns Halogen Free 8

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Power Field-Effect Transistor, 3.2A I(D), 100V, 0.075ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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PFET, 3.2A I(D), 100V, 0.075OHM,

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Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

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CAP CER 2.9PF 25V C0G/NP0 01005

Utmel Electronic

MOSFET, N CH, 13A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):62mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Power Dissipation Pd:26W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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