Infineon BSC080N03LSGATMA1

Name: Infineon BSC080N03LSGATMA1
Brand: Infineon
SKU: BSC080N03LSGATMA1

Transistor Mosfet N-ch 30V 53A 8-PIN Pg-tdson T/r

$ 0.312

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC080N03LSGATMA1	4					0.376	0.312	0.279	7h
Farnell	3	BSC080N03LSGATMA1	0	1	Cut Tape	0.855*	0.732*	0.732*	0.732*	0.732*	7h
HQonline		DS0076759	10	1		0.552	0.539	0.531	0.531	0.531	>1w
Microchip USA		BSC080N03LSGATMA1	316	600	Tray				1.969	1.969	39m
Weyland Electronics Group Pte. Ltd.		BSC080N03LSG	3,357	1	Tape & Reel	0.224	0.224	0.224	0.224	0.224	9h

Inventory History

3 month trend: -14.29%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC080N03LSGATMA1.

IHS

Datasheet10 pages13 years ago

_legacy Avnet

element14 APAC

TME

iiiC

Inventory History

3 month trend:

-14.29%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-03-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

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Descriptions

Descriptions of Infineon BSC080N03LSGATMA1 provided by its distributors.

Transistor MOSFET N-CH 30V 53A 8-Pin PG-TDSON T/R

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ODG (Origin Data Global)

MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON

Newark

Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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N-CH 30V 53A 8.0mOhm TDSON-8 RoHSconf

Rutronik

BSC080N03 - 12V-300V N-CHANNEL P

DigiKey Marketplace

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:53A; Power Dissipation Pd:35W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

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Infineon