Infineon BSC030N03LSGATMA1

Name: Infineon BSC030N03LSGATMA1
Brand: Infineon
SKU: BSC030N03LSGATMA1

Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount

$ 0.398

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Distributor		SKU		Min	Pkg
Newark		BSC030N03LSGATMA1	2,828	1		1.380	0.870	0.575	0.408	0.380
Future Electronics	2	BSC030N03LSGATMA1	5,000	5K	Tape & Reel					0.545
Rutronik		TMOSP9582	5,000	5K						0.338	5h
Arrow Electronics	2	BSC030N03LSGATMA1	4,975	1		1.174	0.797	0.552	0.377	0.352
DigiKey	3	BSC030N03LSGATMA1CT-ND	18,752	1	Cut Tape	1.680	1.056	0.699	0.496	0.454

Inventory History

3 month trend: -0.57%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC030N03LSGATMA1.

_legacy Avnet

Datasheet10 pages15 years ago

Farnell

element14 APAC

iiiC

Newark

Inventory History

3 month trend:

-0.57%

CAD Models

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Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-10-24

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon BSC030N03LSGATMA1 provided by its distributors.

Power MOSFET, N Channel, 30 V, 100 A, 0.0025 ohm, PG-TDSON, Surface Mount

EBV Elektronik

MOSFET, N CH, 100A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:69W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:69W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon