Infineon BSC014N04LSTATMA1

Transistor MOSFET N-Channel 650V 20.2A 5-Pin VSON T/R

Transistor MOSFET N-CH 40V 100A 8-Pin TDSON T/R

OptiMOS™ 5 power MOSFET with enhanced temperature rating for improved robustness, PG-TDSON-8, RoHS

MOSFETs; BSC014N04LSTATMA1; INFINEON TECHNOLOGIES; 40 V; 205 A; 20 V; 115 W

Power Field-Effect Transistor, 205A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Infineon NMOSFET + OptiMOS 5, Vds=40 V, 205 A, TDSON, , 8

Infineon MOSFET BSC014N04LSTATMA1

BSC014N04 - 12V-300V N-CHANNEL P

MOSFET, N-CH, 40V, 100A, 115W, TDSON; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 115W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

OptiMOS™ 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness.Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.