Infineon BSC014N04LSIATMA1

Name: Infineon BSC014N04LSIATMA1
Brand: Infineon
SKU: BSC014N04LSIATMA1

Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount

$ 0.958

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet		BSC014N04LSIATMA1	10,000	5K						0.703	1d
Newark	2	BSC014N04LSIATMA1	21,863	5	Cut Tape		1.990	1.470	1.350	1.350
Arrow Electronics	2	BSC014N04LSIATMA1	4,800	1		1.270	1.270	1.270	1.270	1.270
Future Electronics	2	BSC014N04LSIATMA1	20,000	5K	Tape & Reel					0.805
Rutronik		TMOSP10879	5,000	5K						0.720	7h

Inventory History

3 month trend: -7.78%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC014N04LSIATMA1.

element14 APAC

Datasheet11 pages12 years ago

Infineon SCT

IHS

Inventory History

3 month trend:

-7.78%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSC014N04LSIATMA1

InfineonBSC014N04LSATMA1

Price @ 1000

$ 0.958

$ 0.648

Stock

924,836

1,071,306

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

31 A

32 A

Threshold Voltage

2 V

Rds On Max

1.45 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

96 W

Input Capacitance

4 nF

4.3 nF

Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-02-06

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon BSC014N04LSIATMA1 provided by its distributors.

Power MOSFET, N Channel, 40 V, 100 A, 0.0012 ohm, TDSON, Surface Mount

EBV Elektronik

New 40V and 60V product families, feature not only the industry’s lowest R DS(on) but also a perfect switching behavior for fast switching applications. 15% lower R DS(on) and 31% lower figure of merit (R DS(on) x Q g) compared to alternative devices has been realized by advanced thin wafer technology.

Infineon

MOSFET, N-CH, 40V, 100A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0012ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Po

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 195 / Drain-Source Voltage (Vds) V = 40 / ON Resistance (Rds(on)) mOhm = 2 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 50 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TDSON-8 FL / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 96

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