Infineon BSC010NE2LSATMA1

Name: Infineon BSC010NE2LSATMA1
Brand: Infineon
SKU: BSC010NE2LSATMA1

Transistor, Mosfet, N-channel, 25V, 39A, 1.0 Mohm, 242A, 33 Nc, TSDSON8

$ 0.75

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	47Y7990	8,213	1		2.020	1.290	0.866	0.866	0.866	16h
Newark	2	BSC010NE2LSATMA1	8,213	1	Cut Tape	0.797	0.797	0.797	0.797	0.797
RS (Formerly Allied Electronics)		BSC010NE2LS	10	1	Bulk	0.340	0.340	0.340	0.340	0.340	3h
Arrow Electronics	3	BSC010NE2LSATMA1	30	1		0.479	0.471	0.463	0.463	0.463
Future Electronics	2	BSC010NE2LSATMA1	0	5K	Tape & Reel					0.970

Inventory History

3 month trend: -45.83%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC010NE2LSATMA1.

IHS

Datasheet10 pages13 years ago

Farnell

_legacy Avnet

Inventory History

3 month trend:

-45.83%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSC010NE2LSATMA1

InfineonBSC010NE2LSIATMA1

Price @ 1000

$ 0.75

$ 0.769

Stock

1,882,219

2,825,886

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

40 A

38 A

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.5 W

96 W

Input Capacitance

4.7 nF

4.2 nF

Supply Chain

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-24

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon BSC010NE2LSATMA1 provided by its distributors.

TRANSISTOR, MOSFET, N-CHANNEL, 25V, 39A, 1.0 MOHM, 242A, 33 NC, TSDSON8

RS (Formerly Allied Electronics)

MOSFET N-CH 25V 39A TDSON-8 / Trans MOSFET N-CH 25V 39A Automotive 8-Pin TDSON EP T/R

Win Source

Single N-Channel 25 V 96 W 85 nC OptiMOS Surface Mount Mosfet - TDSON-8

Future Electronics

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:96W; No. of Pins:8Pins RoHS Compliant: Yes

Newark