Infineon IRFR1205PBF

Name: Infineon IRFR1205PBF
Brand: Infineon
SKU: IRFR1205PBF

Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA

$ 1.04

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR1205PBF	0	25	Bulk			1.040	1.040	1.040	6h
Win Source	WS-IRFR1205PBF	25,490	155					0.301	0.289	18h
Worldway Electronics	IRFR1205PBF	17,293	7	Tube		1.102	1.082	1.040	1.019	17h
Anlinkda	IRFR1205PBF	46,070			0.117	0.105	0.096	0.087	0.087	23h
RC Electronics	IRFR1205PBF	30,165	1		0.120	0.110	0.100	0.090	0.090	>1wk

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR1205PBF.

IHS

Datasheet12 pages21 years ago

Datasheet11 pages21 years ago

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 5 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

Related Parts

InfineonIRFR1205TRPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.027Ohm;ID 44A;D-Pak (TO-252AA);PD 107W

Details

InfineonIRFR2405PBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W

Details

onsemiFDD13AN06A0

N-Channel PowerTrench® MOSFET 60V, 50A, 13mΩ

Details

InfineonIRFR48ZPBF

Single N-Channel 55 V 11 mOhm 40 nC HEXFET® Power Mosfet - TO-252AA

Details

onsemiFDD10AN06A0

Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK

Details

onsemiFDD86580-F085

PowerTrench® MOSFET, N-Channel, 60 V,50 A, 10 mΩ

Details

Descriptions

Descriptions of Infineon IRFR1205PBF provided by its distributors.

Single N-Channel 55 V 0.027 Ohm 65 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 55V, 37A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:55V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:69W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:44A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:69W; Power Dissipation Pd:69W; Pulse Current Idm:150A; SMD Marking:IRFR1205; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC