Infineon BSC010NE2LSIATMA1
$ 0.68
NRND
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
3 month trend: +4.87%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
Download Infineon BSC010NE2LSIATMA1 symbol, footprint, and 3D STEP models from our trusted partners.
| source | eCAD | mCAD | FILES |
|---|---|---|---|
 Component Search Engine | SymbolFootprint | 3D | Download |
 EE Concierge | SymbolFootprint | ||
 SnapEDA | SymbolFootprint | 3D | Download |
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.68
$ 0.747
Stock
2,574,356
1,642,813
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
38 A
40 A
Threshold Voltage
-
-
Rds On Max
-
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
96 W
2.5 W
Input Capacitance
4.2 nF
4.7 nF
Supply Chain
Country of OriginAustria, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-14
Lifecycle StatusNRND (Last Updated: 4 months ago)
Related Parts
InfineonBSC050NE2LSATMA1
Power MOSFET, N Channel, 25 V, 58 A, 0.0042 ohm, TDSON, Surface Mount
InfineonBSC009NE2LSATMA1
25 V N-CHANNEL POWER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH LOW
Descriptions
Descriptions of Infineon BSC010NE2LSIATMA1 provided by its distributors.
Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
N-Ch MOSFET 20V 25V 1.05mΩ@10V 100A 59nC 4.2nF@12V TDSON(EP) Bracket Mount, SMD 5.15mm × 590cm × 1mm
MOSFETs; BSC010NE2LSI; INFINEON TECHNOLOGIES; 25 V; 38 A; 20 V; 96 W
Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +4.87%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)38 A
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)25 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.2 nF
Max Dual Supply Voltage25 V
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.05 mΩ
Package Quantity5000
PackagingTape & Reel
Power Dissipation96 W
Rise Time6.2 ns
Schedule B8541290080
Compliance
Environmental Classification
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeContains Lead
REACH SVHCAffected
RoHSCompliant
Compliance Statements