Infineon BSC010NE2LSIATMA1

Name: Infineon BSC010NE2LSIATMA1
Brand: Infineon
SKU: BSC010NE2LSIATMA1

2.5KW 20V 2V 59NC 1N 25V 1.05M¦¸@ 10V 100A 4.2NF@ 12V Tdson(ep) , 5.15MM*590CM*1MM

$ 0.769

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Avnet	2	BSC010NE2LSIATMA1	20,000	5K						0.546	3d
Newark	2	BSC010NE2LSIATMA1	6,636	1	Cut Tape	0.795	0.795	0.795	0.791	0.791
Rochester Electronics		BSC010NE2LSIATMA1	7,182					0.827	0.687	0.612	14h
Arrow Electronics	2	BSC010NE2LSIATMA1	38	1		1.042	0.865	0.560	0.560	0.560
DigiKey	3	BSC010NE2LSIATMA1CT-ND	9,171	1	Cut Tape	2.780	1.784	1.212	0.889	0.707

Inventory History

3 month trend: +95.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC010NE2LSIATMA1.

Newark

Datasheet12 pages0 years ago

Datasheet13 pages0 years ago

Factory Futures

Inventory History

3 month trend:

+95.48%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonBSC010NE2LSIATMA1

InfineonBSC010NE2LSATMA1

Price @ 1000

$ 0.769

$ 0.75

Stock

2,825,767

1,892,241

Authorized Distributors

Mount

Surface Mount

Case/Package

Drain to Source Voltage (Vdss)

25 V

Continuous Drain Current (ID)

38 A

40 A

Threshold Voltage

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

96 W

2.5 W

Input Capacitance

4.2 nF

4.7 nF

Supply Chain

Country of OriginAustria, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-14

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon BSC010NE2LSIATMA1 provided by its distributors.

2.5KW 20V 2V 59nC 1N 25V 1.05m¦¸@ 10V 100A 4.2nF@ 12V TDSON(EP) , 5.15mm*590cm*1mm

Unikeyic (ICkey)

Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R

Verical

MOSFETs; BSC010NE2LSI; INFINEON TECHNOLOGIES; 25 V; 38 A; 20 V; 96 W

Maritex

Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).

Infineon

Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:96W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon Technologies BSC010NE2LSIATMA1.

Newark