Infineon 2N7002H6327XTSA2

Name: Infineon 2N7002H6327XTSA2
Brand: Infineon
SKU: 2N7002H6327XTSA2

Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23

$ 0.057

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Distributor		SKU		Min	Pkg
Avnet	2	2N7002H6327XTSA2	2,061,000	3K						0.020	2d
Newark	2	2N7002H6327XTSA2	25,213	1	Cut Tape	0.227	0.140	0.087	0.056	0.056
Future Electronics	2	2N7002H6327XTSA2	57,000	3K	Tape & Reel					0.020
Arrow Electronics	3	2N7002H6327XTSA2	5,748	1		0.203	0.072	0.057	0.053	0.033
Rochester Electronics		2N7002H6327XTSA2	18,919					0.033	0.027	0.024	7h

Inventory History

3 month trend: -32.70%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon 2N7002H6327XTSA2.

ODG (Origin Data Global)

Datasheet9 pages13 years ago

IHS

Farnell

iiiC

Inventory History

3 month trend:

-32.70%

CAD Models

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Supply Chain

Country of OriginAustria, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-04-16

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon 2N7002H6327XTSA2 provided by its distributors.

Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.5W; PG-SOT23

Epart123

Mosfet, N-Ch, 60V, 0.3A, Sot-23 Rohs Compliant: Yes |Infineon Technologies 2N7002H6327XTSA2

Newark

Transistor MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R

Avnet Japan

Power MOSFET, N Channel, 60 V, 300 mA, 3 ohm, SOT-23, Surface Mount

Avnet

MOSFET Devices; INFINEON; 2N7002H6327XTSA2; 60 V; 300 mA; 20 V; 500 mW

Maritex

OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

The 2N7002 is an n-channel enhancement mode MOSFET in a small surface mount package with superior switching performance. This product is particularly suited for low-voltage, low-current applications.

Infineon

MOSFET, N CH, 60V, 0.3A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; P

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) mW = 500

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