Honeywell SEP8705-003

Name: Honeywell SEP8705-003
Brand: Honeywell
SKU: SEP8705-003

Diode, Infrared Emitter, T-1, 880 Nm, 1.7 V, 50 ma, -40 C, 85 C, 70 Mw, 0.7

$ 1.99

Obsolete

Request Sample Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	SEP8705-003	0	100	Bulk			1.990	1.990	1.990	11h
element14 APAC	SEP8705-003	0	1		3.237*	2.768*	2.252*	2.048*	2.048*	12h
Farnell	SEP8705-003	0	1		2.833*	1.705*	1.207*	1.102*	1.102*	22h
Aztech	SEP8705-003	11,180			4.290	4.290	4.290	4.290	4.290	18h
QUARKTWIN TECHNOLOGY LTD	SEP8705-003	Contact								7d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Honeywell SEP8705-003.

Factory Futures

Datasheet4 pages29 years ago

element14 APAC

Electro Sonic

CAD Models

Download Honeywell SEP8705-003 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
EE Concierge	SymbolFootprint

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Lifecycle StatusObsolete (Last Updated: 6 months ago)

Related Parts

HoneywellSDP8405-003

Detector, Phototransistor; T-1; NPN; 20 deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA

Details

HoneywellSDP8105-001

Detector; T-1; NPN; 20 deg; 15 V; 1.1 V; 0.5 mA (Min.); 250 nA; 70 mW; -40 deg

Details

HoneywellSDP8405-002

No Phototransistor Chip Silicon 935nm 2-Pin T-1

Details

OptekOP550A

NPN silicon phototransistor, Voltage - Collector Emitter Breakdown 30V, Radial-2, RoHS

Details

OptekOP505A

NPN silicon phototransistor, Voltage - Collector Emitter Breakdown 30V, T-1-2, RoHS

Details

OptekOP505B

Sensor Photo 935Nm Top View T1 Rohs Compliant: Yes |Tt Electronics/optek Technology OP505B

Details

Descriptions

Descriptions of Honeywell SEP8705-003 provided by its distributors.

DIODE, INFRARED EMITTER, T-1, 880 NM, 1.7 V, 50 MA, -40 C, 85 C, 70 MW, 0.7

RS (Formerly Allied Electronics)

Infrared Emitter 880nm Circular Top Mount 2-Pin T-1

Verical

3.05 mm 1 ELEMENT INFRARED LED 880 nm

Component Stockers USA

Sensors, Infrared Sensors, Emitter

Powell Electronics

PHOTODIODE, 880NM; Peak Wavelength:880nm; Forward Current If(AV):50mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:15°; Supply Voltage Range:1.7V; Operating Temperature Range:-40°C to +85°C; Diode Case Style:T-1 (3mm); No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Forward Current If:50mA; Forward Current If Max:50mA; Forward Voltage VF Max:1.7V; LED Colour:Infrared; Mounting Type:Through Hole; Package / Case:T-1; Power Dissipation Pd:70mW; Wavelength Typ:880nm

element14 APAC

SEP8705 Series AlGaAs Infrared Emitting Diode, T-1 Package The SEP8705 is an aluminum gallium arsenide infrared emitting diode transfer molded in a T-1 smoke gray plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. These devices typically exhibit 70% greater power intensity compared to GaAs devices at the same forward current. Lead lengths are staggered to provide a simple method of polarity identification.

Honeywell