Diodes Inc. ZXTN2010GTA

Name: Diodes Inc. ZXTN2010GTA
Brand: Diodes Inc.
SKU: ZXTN2010GTA

Bipolar (BJT) Single Transistor, NPN, 80 V, 6 A, 1.6 W, SOT-223, Surface Mount

$ 0.335

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Distributor		SKU		Min	Pkg
Newark		ZXTN2010GTA	29	1	Cut Tape	0.124	0.124	0.124	0.124	0.124
Verical	3	ZXTN2010GTA	35	35				0.273	0.273	0.273
Arrow Electronics	4	ZXTN2010GTA	1	1		0.234	0.234	0.234	0.234	0.234
DigiKey	3	ZXTN2010GTACT-ND	13,076	1	Cut Tape	1.460	0.918	0.608	0.475	0.475
TME	2	ZXTN2010GTA	720	1		1.300	0.800	0.546	0.456	0.456	19h

Inventory History

3 month trend: -4.61%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZXTN2010GTA.

Upverter

Technical Drawing5 pages9 years ago

Newark

IHS

TME

Diodes Inc SCT

Inventory History

3 month trend:

-4.61%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-06-03

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. ZXTN2010GTA provided by its distributors.

Bipolar (BJT) Single Transistor, NPN, 80 V, 6 A, 1.6 W, SOT-223, Surface Mount

Avnet Silica

Power Bipolar Transistor, 6A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

ZXTN2010G Series NPN 6 A 60 V SMT Silicon Medium Power Transistor - SOT-223

Future Electronics

Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R

Verical

General Purpose Transistors NPN Ic=6A Vceo=60V hfe=100~300 P=3W SOT223

HQonline

TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 130MHz; Power Dissipation Pd: 1.6W; DC Collector Current: 6A; DC Current Gain hFE: 200hFE; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 30mV; Current Ic Continuous a Max: 6A; Gain Bandwidth ft Typ: 130MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device

Farnell

Transistor, Npn, 80V, 6A, 1.6W, Sot-223; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:80V; Frecuencia De Transición Ft:130Mhz; Disipación De Potencia Pd:1.6W; Corriente De Colector Dc:6A; Núm. De Contactos:4 |Diodes Inc. ZXTN2010GTA

Newark