Diodes Inc. ZVN3310A

N-channel Enhancement Mode Vertical Dmos Fet | Mosfet N-ch 100V 200MA TO92-3
$ 0.407
Production
Manufacturer PageDatasheet

Price and Stock

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DistributorSKUMinPkg
NewarkZVN3310A4,4031
VericalZVN3310A4,0004K
Arrow ElectronicsZVN3310A4,0004K
DigiKeyZVN3310A-ND10,2951Bulk
TME
2
ZVN3310A01
15h

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZVN3310A.

Newark

Datasheet3 pages19 years ago
Datasheet3 pages19 years ago

IHS

Diodes Inc SCT

Future Electronics

iiiC

Inventory History

3 month trend:
-5.40%
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Alternate Parts

This Part
Alternate Parts
Diodes Inc.ZVN3310A
Diodes Inc.ZVN3310ASTZ
Price @ 1000
$ 0.407
$ 0.415
Stock
226,132
248,788
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-92-3
TO-92-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
200 mA
200 mA
Threshold Voltage
2.4 V
-
Rds On Max
10 Ω
10 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
625 mW
625 mW
Input Capacitance
40 pF
40 pF

Supply Chain

Country of OriginGermany
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-02-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

Diodes Inc.ZVN3310ASTZ
625mW(Ta) 20V 2.4V@1mA 1N 100V 10¦¸@ 500mA,10V 200mA 40pF@25V TO-92 , 4.77mm*2.41mm*4.01mm
Details
Diodes Inc.ZVP2110A
Transistor: P-MOSFET; unipolar; -100V; -0.23A; 0.7W; TO92
Details
Diodes Inc.ZVP2110ASTZ
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
Details

Descriptions

Descriptions of Diodes Inc. ZVN3310A provided by its distributors.

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | MOSFET N-CH 100V 200MA TO92-3
Win Source
Power MOSFET, N Channel, 100 V, 200 mA, 10 ohm, TO-226AA, Through Hole
Avnet
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET, N E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):10ohm; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:2A
element14 APAC

Images

Farnell
TME
RS (Formerly Allied Electronics)
Future Electronics
iiiC

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated

Part Number Aliases

This part may be known by these alternate part numbers:

  • ZVN3310 A
  • ZVN3310A.