Diodes Inc. FZT853

Name: Diodes Inc. FZT853
Brand: Diodes Inc.
SKU: FZT853

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

$ 0.628

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Newark	2	FZT853	1,146	1	Cut Tape	1.230	1.080	0.912	0.912	0.912
element14 APAC	2	FZT853	1,146	1	Cut Tape	1.651*	1.098*	0.747*	0.495*	0.495*	14h
Farnell	3	FZT853	1,146	1	Cut Tape	1.771*	1.105*	0.738*	0.522*	0.522*	1d
Win Source		WS-FZT853	1,440	50				1.100	0.734	0.734	1h
UnikeyIC		FZT853	1,402	19				0.804	0.539	0.539	6h

Inventory History

3 month trend: +326%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. FZT853.

Newark

Datasheet3 pages19 years ago

Datasheet7 pages10 years ago

IHS

element14

Diodes Inc SCT

Ciiva

Inventory History

3 month trend:

+326%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.FZT853

Diodes Inc.FZT853TA

Price @ 1000

$ 0.628

$ 0.456

Stock

128,750

1,272,043

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

6 A

Transition Frequency

130 MHz

Collector Emitter Saturation Voltage

340 mV

hFE Min

100

Power Dissipation

3 W

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1995-10-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. FZT853 provided by its distributors.

Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

Trans GP BJT NPN 100V 6A 3000mW Automotive 4-Pin(3+Tab) SOT-223

Verical

100V 24W 100@2A,2V 6A NPN SOT-223 Bipolar (BJT) ROHS

EBEE

; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Continuous Collector Current, Ic:6A; Collector Emitter Saturation Voltage, Vce(sat):50mV; Power Dissipation, Pd:3W; DC Current Gain Min (hfe):100 ;RoHS Compliant: Yes

Newark

TRANSISTOR, NPN, SOT-223; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:100V; Current Ic Continuous a Max:6A; Voltage, Vce Sat Max:50mV; Power Dissipation:3W; Min Hfe:100; ft, Typ:130MHz; Case Style:SOT-223; Termination Type:SMD; Current Ic Max:6A; Current Ic hFE:2A; Current, Icm Pulsed:10A; Power, Ptot:3W; SMD Marking:FZT853; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vcbo:200V

Farnell