onsemi MBT3906DW1T1G

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min60
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityPNP
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi MBT3906DW1T1G.

Upverter
Datasheet6 pages12 years ago
Datasheet6 pages14 years ago
onsemi
Datasheet7 pages4 years ago
Farnell
Datasheet6 pages10 years ago
TME
Datasheet6 pages0 years ago
Newark
Datasheet7 pages11 years ago
iiiC
Datasheet6 pages12 years ago
Jameco
Datasheet7 pages15 years ago
DigiKey
Datasheet8 pages0 years ago

Inventory History

3 month trend:
-26.24%

Alternate Parts

Price @ 1000
$ 0.035
$ 0.048
$ 0.048
Stock
3,493,674
4,256,619
4,256,619
Authorized Distributors
8
8
8
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-363-6
SOT-363
SOT-363
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
-400 mV
-400 mV
-400 mV
hFE Min
60
100
100
Power Dissipation
150 mW
200 mW
200 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi MBT3906DW1T1G.

Related Parts

Descriptions

Descriptions of onsemi MBT3906DW1T1G provided by its distributors.

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
Trans GP BJT PNP 40V 0.2A 150mW Automotive 6-Pin SOT-363 T/R
MBT Series 40 V 200 mA SMT PNP Silicon Dual General Purpose Transistor - SOT-363
Transistor, dual PNP, 40V, 200MA, 150mW, -55 to 150C, 833C/W, SOT363 | ON Semiconductor MBT3906DW1T1G
40V 150mW 100@10mA,1V 200mA 2PCSPNP SOT-363-6(SC-70-6) Bipolar Transistors - BJT ROHS
200 mA 40 V 2 CHANNEL PNP Si SMALL SIGNAL TRANSISTOR
BIPOLAR TRANSISTOR, PNP, -40V, FULL REEL; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Power Dissipation Pd: 150mW; DC Collector Current: -200mA; DC Current Gain hFE: 60hFE; Transistor Case Style: SOT-36
TRANSISTOR, PNP, -40V, -0.2A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage Max NPN:-; Collector Emitter Voltage Max PNP:-40V; Continuous Collector Current NPN:200mA; Continuous Collector Current PNP:200mA RoHS Compliant: Yes
The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package this device is ideal for low-power surface mount applications where board space is at a premium.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • MBT3906DW1T1G.

Technical Specifications

Physical
Case/PackageSOT-363-6
Contact PlatingTin
Number of Pins6
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min60
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityPNP
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm

Documents

Download datasheets and manufacturer documentation for onsemi MBT3906DW1T1G.

Upverter
Datasheet6 pages12 years ago
Datasheet6 pages14 years ago
onsemi
Datasheet7 pages4 years ago
Farnell
Datasheet6 pages10 years ago
TME
Datasheet6 pages0 years ago
Newark
Datasheet7 pages11 years ago
iiiC
Datasheet6 pages12 years ago
Jameco
Datasheet7 pages15 years ago
DigiKey
Datasheet8 pages0 years ago

Compliance

Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement1 page11 years ago
Rohs Statement3 pages3 years ago
Reach Statement8 pages9 years ago