Infineon IRLZ44NPBF
Production
In StockTechnical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)41 A
Current Rating47 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation83 W
Rds On Max22 mΩ
Recovery Time120 ns
Resistance22 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Inventory History
3 month trend: +14.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRLZ44NPBF.
Newark
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Mouser
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DigiKey
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLZ44NPBF.
Related Parts
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onsemiHUF76429P3
47 A 60 V 0.023 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Descriptions
Descriptions of Infineon IRLZ44NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.022Ohm;ID 47A;TO-220AB;PD 110W;VGS +/-16V
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 47 A, TO-220, IRLZ44NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 0.035 Ohm 48 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 55V 47A 3-Pin(3+Tab) TO-220AB - Rail/Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W
Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 55V, 41A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:55V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:83W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:47A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.8°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:83W; Power Dissipation Pd:83W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +14.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)41 A
Current Rating47 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation83 W
Rds On Max22 mΩ
Recovery Time120 ns
Resistance22 mΩ
Rise Time84 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRLZ44NPBF.
Newark
Upverter
Mouser
Jameco
DigiKey
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements