Infineon IRFZ24NPBF
Production
In StockTechnical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance70 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation45 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time34 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Inventory History
3 month trend: -12.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon IRFZ24NPBF.
Mouser
Jameco
Farnell
DigiKey
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRFZ24NPBF.
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Descriptions
Descriptions of Infineon IRFZ24NPBF provided by its distributors.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.07Ohm;ID 17A;TO-220AB;PD 45W;VGS +/-20V
Transistor MOSFET N Channel 55 Volt 17 Amp 3 Pin 3+ Tab TO-220 AB
MOSFET N-CH 55V 17A TO-220AB / Trans MOSFET N-CH Si 55V 17A 3-Pin(3+Tab) TO-220AB Tube
Single N-Channel 55 V 0.07 Ohm 20 nC HEXFET® Power Mosfet - TO-220-3
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 17 A, TO-220, IRFZ24NPBF
Transistor MOSFET N-Ch. 17A/55V TO220 IRFZ 24 NPBF
HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 55V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:17A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:68A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -12.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance70 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation45 W
Rds On Max70 mΩ
Resistance70 mΩ
Rise Time34 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Voltage Rating (DC)55 V
Dimensions
Height8.77 mm
Lead Pitch2.54 mm
Length10.5156 mm
Width4.69 mm
Documents
Download datasheets and manufacturer documentation for Infineon IRFZ24NPBF.
Mouser
Jameco
Farnell
DigiKey
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements