Vishay IRFBF20PBF
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance490 pF
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation54 W
Rds On Max8 Ω
Resistance6.5 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time56 ns
Turn-On Delay Time8 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Inventory History
3 month trend: -4.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay IRFBF20PBF.
Related Parts
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Descriptions
Descriptions of Vishay IRFBF20PBF provided by its distributors.
Single N-Channel 800 V 6.5 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 900V 1.7A 3-Pin(3+Tab) TO-220AB
MOSFET, N, 900V, 1.7A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -4.12%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance8 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance490 pF
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation54 W
Rds On Max8 Ω
Resistance6.5 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time56 ns
Turn-On Delay Time8 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements